Technologies and Processes for Hetero-Integration of Power Electronic Systems (MIIMOSYS)

Third Party Funds Group - Overall project


Acronym: MIIMOSYS

Start date : 01.08.2017

End date : 31.12.2020

Extension date: 30.09.2021

Website: https://www.elektronikforschung.de/projekte/miimosys


Project details

Scientific Abstract

The aim of the MIIMOSYS is the worldwide first demonstration of heterogeneous on-chip integration of GaN switching devices and silicon CMOS devices at the system level via micro-transfer-printing (µTP). This advanced 3D-Integration of high-performance GaN switching Devices with highly integrated silicon CMOS IC at wafer-level enables the advantages of both semiconductor materials and technologies to be combined on one single chip for the first time.

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Funding Source