Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene

Third party funded individual grant


Start date : 01.04.2017

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Journal

Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing (2021) Kobayashi T, Rühl M, Lehmeyer J, Zimmermann L, Krieger M, Weber HB Journal article, Letter Stark Tuning of the Silicon Vacancy in Silicon Carbide (2020) Rühl M, Bergmann L, Krieger M, Weber HB Journal article, Letter Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing (2018) Rühl M, Ott C, Götzinger S, Krieger M, Weber HB Journal article, Letter