Tom Becker

Lehrstuhl für Elektronische Bauelemente

Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements (2024) Cornigli D, Schlichting H, Becker T, Larcher L, Erlbacher T, Pešić M Journal article Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization (2024) Becker T, Hellinger C, Fuchs A, Körfer J, Rusch O Journal article SiC engineered substrate: increasing SiC MOSFETs current density from device to module level (2024) Becker T Conference contribution, Conference Contribution The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability (2023) Schlichting H, Lim M, Becker T, Kallinger B, Erlbacher T Journal article The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability (2023) Becker T Authored book, Volume of book series Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device Through the Use of SmartSiC™ Substrate (2023) Becker T Authored book, Volume of book series Improved Power Cycling Reliability through the use of SmartSiC ™ Engineered Substrate for Power Devices (2023) Becker T Conference contribution, Conference Contribution The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability (2023) Schlichting H, Lim M, Becker T, Kallinger B, Erlbacher T Book chapter / Article in edited volumes Proven Power Cycling Reliability of SmartSiC™ Substrate for Power Devices (2022) Becker T Conference contribution, Conference Contribution Reliability of Silicon-Nitride based High-Voltage Monolithic Capacitors (2021) Becker T Other publication type, Workshop