Sascha Breun



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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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Abstract

Journal

A 150-168 GHz Mixer and Quadrupler Unit in SiGe BiCMOS Technology for JCAS Applications Based on DDS Signal Generation Up to 5 GHz (2025) Isbilen T, Breun S, Arneth N, Schrotz AM, Scheller K, Franchi N, Weigel R Conference contribution, Conference Contribution A J- and D-Band Dual-Band Receiver for FMCW Radar and RadCom in a SiGe Technology (2025) Schrotz AM, Breun S, Fischer G, Weigel R Conference contribution, Conference Contribution A 148-166 GHz Meissner Push-Push VCO With -168 dBc/Hz FOMT Using a Single Transformer in SiGe BiCMOS Technology (2025) Breun S, Schrotz AM, Koch M, Fischer G, Weigel R Conference contribution A 304 to 337 GHz Push-Push Frequency Doubler with 6.8 dBm Pmax using T-Junction Combining in 90 nm SiGe BiCMOS Technology (2025) Breun S, Schrotz AM, Koch M, Franchi N, Weigel R Conference contribution, Conference Contribution Timed array architectures and integrated true-time delay elements for wideband millimeter-wave antenna arrays (2024) Koch M, Schönhärl S, Breun S, Fischer G, Weigel R Journal article, Review article High-Frequency Multiport Vector Network Analysis Methodology Using Port Extension Across Multiple VNAs (2024) Löffler J, Koch M, Breun S, Weigel R Conference contribution Broadband Low-Loss Fan-In Chip-to-Package Interconnect Enabling System-in-Package Applications Beyond 220 GHz (2024) Pfahler T, Breun S, Engel L, Geissler C, Schür J, Vossiek M Journal article A Digitally Controlled D-Band Phase Shifter for FMCW Radar and RadCom in SiGe BiCMOS (2024) Schrotz AM, Breun S, Schonharl S, Weigel R Conference contribution A 290-359 GHz Push-Push Signal Source with 1.7 dBm Pmax using Variable Inductance in SiGe BiCMOS Technology (2024) Breun S, Schrotz AM, Koch M, Issakov V, Weigel R Conference contribution A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology (2024) Koch M, Breun S, Weigel R Conference contribution, Conference Contribution
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