PD Dr. Peter Pichler

Technische Fakultät

A Review of Platinum Diffusion in Silicon and Its Application for Lifetime Engineering in Power Devices (2021) Johnsson A, Schmidt G, Hauf M, Pichler P Journal article, Review article Molecular dynamics modeling of the radial heat transfer from silicon nanowires (2020) Bejenari I, Burenkov A, Pichler P, Deretzis I, La Magna A Conference contribution Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon (2019) Beljakowa S, Pichler P, Kalkofen B, Hübner R Journal article On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics (2019) Rattmann G, Pichler P, Erlbacher T Journal article Channeling in 4H-SiC from an application point of view (2019) Pichler P, Sledziewski T, Häublein V, Bauer AJ, Erlbacher T Conference contribution 3D simulation of silicon-based single-electron transistors (2017) Klüpfel F, Pichler P Conference contribution, Conference Contribution Systematic analysis of the high-and low-field channel mobility in lateral 4H-SiC MOSFETs (2014) Strenger C, Uhnevionak V, Mortet V, Ortiz G, Erlbacher T, Burenkov A, Bauer A, et al. Conference contribution, Conference Contribution Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs (2013) Strenger C, Uhnevionak V, Burenkov A, Bauer A, Pichler P, Erlbacher T, Ryssel H, Frey L Conference contribution, Conference Contribution Melt Depth and Time Variations during Pulsed Laser Thermal Annealing with One and More Pulses, (2013) Hackenberg M, Rommel M, Rumler M, Lorenz J, Pichler P, Huet K, Negro R, et al. Book chapter / Article in edited volumes Germanium substrate loss during thermal processing (2011) Kaiser RJ, Koffel S, Pichler P, Bauer AJ, Amon B, Frey L, Ryssel H Journal article, Original article