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Albert-Marcel Schrotz
List of publications:
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Lehrstuhl für Intelligente Technische Elektronik und Systeme
Lehrstuhl für Technische Elektronik (LTE)
Department Elektrotechnik-Elektronik-Informationstechnik (EEI)
Project Leads
(1)
Publications
(20)
Types of publications
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Journal article
Journal article
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Book chapter / Article in edited volumes
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Translation
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Thesis
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Conference contribution
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Other publication type
Unpublished / Preprint
Unpublished / Preprint
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A 150-168 GHz Mixer and Quadrupler Unit in SiGe BiCMOS Technology for JCAS Applications Based on DDS Signal Generation Up to 5 GHz (2025)
Isbilen T, Breun S, Arneth N, Schrotz AM, Scheller K, Franchi N, Weigel R
Conference contribution, Conference Contribution
A J- and D-Band Dual-Band Receiver for FMCW Radar and RadCom in a SiGe Technology (2025)
Schrotz AM, Breun S, Fischer G, Weigel R
Conference contribution, Conference Contribution
A Broadband Sub-THz Push-Push Frequency Doubler in 22 nm FDSOI (2025)
Scheller K, Engelmann A, Hetterle P, Weigel R, Schrotz AM, Fischer G
Conference contribution, Conference Contribution
A 148-166 GHz Meissner Push-Push VCO With -168 dBc/Hz FOMT Using a Single Transformer in SiGe BiCMOS Technology (2025)
Breun S, Schrotz AM, Koch M, Fischer G, Weigel R
Conference contribution
A 304 to 337 GHz Push-Push Frequency Doubler with 6.8 dBm Pmax using T-Junction Combining in 90 nm SiGe BiCMOS Technology (2025)
Breun S, Schrotz AM, Koch M, Franchi N, Weigel R
Conference contribution, Conference Contribution
A Novel Neuropredictive SAR ADC Architecture for Ultra-Low Power Applications (2025)
Spielberger A, Pfannenmüller C, Spitzkopf L, Armbrecht W, Schrotz AM, Weigel R, Franchi N
Unpublished / Preprint
A 200 GHz Area-Efficient 4-stage Power Amplifier with Stacked Output Stage in 22 nm FDSOI (2024)
Scheller K, Engelmann A, Probst F, Flohr M, Weigel R, Schrotz AM, Fischer G
Conference contribution, Conference Contribution
A Digitally Controlled D-Band Phase Shifter for FMCW Radar and RadCom in SiGe BiCMOS (2024)
Schrotz AM, Breun S, Schonharl S, Weigel R
Conference contribution
A 290-359 GHz Push-Push Signal Source with 1.7 dBm Pmax using Variable Inductance in SiGe BiCMOS Technology (2024)
Breun S, Schrotz AM, Koch M, Issakov V, Weigel R
Conference contribution
A 296-336 GHz 2 dBm Pmax Frequency Octupler Using Bootstrapped and Push-Push Topology in 90 nm SiGe BiCMOS Technology (2024)
Breun S, Schrotz AM, Koch M, Fischer G, Weigel R
Conference contribution, Conference Contribution
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