Dr.-Ing. Julietta Förthner

Lehrstuhl für Elektronische Bauelemente Chair of Applied Physics

A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation (2023) Weiße J Authored book, Volume of book series RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC (2020) Weiße J, Matthus C, Schlichting H, Mitlehner H, Erlbacher T Journal article Deeper insight into lifetime-engineering in 4H-SiC by ion implantation (2019) Erlekampf J, Kallinger B, Weiße J, Rommel M, Berwian P, Friedrich J, Erlbacher T Journal article Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440) (2019) Weiße J, Hauck M, Krieger M, Bauer AJ, Erlbacher T Journal article, Erratum Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (2019) Weiße J, Hauck M, Krieger M, Bauer A, Erlbacher T Journal article, Letter Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements (2019) Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A Conference contribution On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits (2019) Weiße J, Mitlehner H, Frey L, Erlbacher T Conference contribution Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices (2018) Weiße J, Hauck M, Sledziewski T, Tschiesche M, Krieger M, Bauer A, Mitlehner H, et al. Journal article, Report On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs (2016) Pobegen G, Weiße J, Hauck M, Weber HB, Krieger M Journal article, Letter