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Thomas Hupfer
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Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
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(2)
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Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy (2013)
Hupfer T, Hens P, Kaiser M, Jokubavicius V, Syväjärvi M, Wellmann P
Journal article, Original article
Polycrystalline SiC as source material for the growth of fluorescent SiC layers (2013)
Kaiser M, Hupfer T, Jokubavicius V, Schimmel S, Syväjärvi M, Ou Y, Ou H, et al.
Journal article, Original article