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Georg Neubauer
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Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
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(3)
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Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping (2015)
Wellmann P, Neubauer G, Fahlbusch L, Salamon M, Uhlmann N
Journal article
Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography (2014)
Neubauer G, Salamon M, Uhlmann N, Wellmann P
Journal article
Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth (2013)
Neubauer G, Salamon M, Roider F, Uhlmann N, Wellmann P
Journal article, Original article