AIXTRON SE
Industry / private company
Location:
Herzogenrath,
Germany (DE)
ISNI: 000000040463924X
ROR: https://ror.org/02adgag39
Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures (2020)
Besendörfer S, Meißner E, Zweipfennig T, Yacoub H, Fahle D, Behmenburg H, Kalisch H, et al.
Journal article