Institut d'électronique de microélectronique et de nanotechnologie
Research facility
Location:
Villeneuve-d'Ascq,
France (FR)
ISNI: 0000000403683863
ROR: https://ror.org/02q4res37
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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors (2020)
Besendörfer S, Meißner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T
Journal article
Vertical breakdown of GaN on Si due to V-pits (2020)
Besendörfer S, Meißner E, Tajalli A, Meneghini M, Freitas JA, Derluyn J, Medjdoub F, et al.
Journal article