Institut d'électronique de microélectronique et de nanotechnologie

Research facility


Location: Villeneuve-d'Ascq, France (FR) FR

ISNI: 0000000403683863

ROR: https://ror.org/02q4res37

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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Abstract

Journal

Corrigendum: Oxidative burst-dependent NETosis is implicated in the resolution of necrosis-associated sterile inflammation (Frontiers in Immunology, (2016), 7, (557), 10.3389/fimmu.2016.00557) (2025) Biermann MHC, Podolska M, Knopf J, Reinwald C, Weidner D, Maueröder C, Hahn J, et al. Journal article, Erratum The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors (2020) Besendörfer S, Meißner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T Journal article Vertical breakdown of GaN on Si due to V-pits (2020) Besendörfer S, Meißner E, Tajalli A, Meneghini M, Freitas JA, Derluyn J, Medjdoub F, et al. Journal article