Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks (2019) Schuh P, Steiner J, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article, Original article Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base (2019) Schöler M, Schuh P, Steiner J, Wellmann P Journal article, Original article Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates (2019) Schuh P, Künecke U, Litrico G, Mauceri M, La Via F, Monnoye S, Zielinski M, Wellmann P Journal article, Original article Three-dimensional in-situ growth surveillance of bulky SiC crystals (2019) Salamon M, Arzig M, Wellmann P, Uhlmann N Conference contribution, Original article Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules (2019) Steiner J, Arzig M, Hsiao TC, Wellmann P Journal article, Original article Deep electronic levels in n-type and p-type 3C-SiC (2019) Schöler M, Lederer M, Wellmann P Journal article, Original article Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography (2019) Salamon M, Arzig M, Uhlmann N, Wellmann P Journal article Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth (2019) Schuh P, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC (2019) Steiner J, Roder M, Nguyen BD, Sandfeld S, Danilewsky A, Wellmann P Journal article Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide (2019) Schöler M, Lederer M, Schuh P, Wellmann P Other publication type