Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Determination of Thermal Properties of Carbon Materials above 2000 °C for Application in High Temperature Crystal Growth (2025) Ihle J, Wellmann P Journal article Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications (2024) Chaussende D, Tabouret V, Crisci A, Morais M, Coindeau S, Berthomé G, Kollmuß M, et al. Journal article Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer (2024) Nguyen BD, Steiner J, Wellmann P, Sandfeld S Journal article Synthesis of BaZrS3 and BaS3 Thin Films: High and Low Temperature Approaches (2024) Freund T, Jamshaid S, Monavvar M, Wellmann P Journal article Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substrates (2024) Jamshaid S, Cicconi MR, Heiß W, Webber KG, Wellmann P Journal article Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules (2024) Schultheiß J, Ihle J, Nanot SU, Bonanomi S, Munoz DC, Hammer R, Wellmann P Book chapter / Article in edited volumes Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C (2023) Steiner J, Schultheiß J, Wang S, Wellmann P Journal article Investigation of defects in 4H-SiC and the SiC/SiO2 interface using DLTS measurements (2023) Xue W Thesis The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology (2023) Wellmann P, Steiner J, Strüber S, Arzig M, Salamon M, Uhlmann N, Nguyen BD, Sandfeld S Journal article Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties (2023) Roder M, Steiner J, Wellmann P, Kabukcuoglu M, Hamann E, Haaga S, Hänschke D, Danilewsky A Journal article