Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers (2022) Steiner J, Nguyen BD, Roder M, Danilewsky A, Sandfeld S, Wellmann P Conference contribution Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide (2022) Arzig M, Künecke U, Salamon M, Uhlmann N, Wellmann P Conference contribution Review of Sublimation Growth of SiC Bulk Crystals (2022) Wellmann P, Arzig M, Ihle J, Kollmuß M, Steiner J, Mauceri M, Crippa D, et al. Conference contribution Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications (2022) Kollmuß M, Köhler J, Ou H, Fan W, Chaussende D, Hock R, Wellmann P Conference contribution In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth (2022) Schimmel S, Salamon M, Tomida D, Kobelt I, Heinlein L, Kimmel AC, Steigerwald T, et al. Conference contribution, Abstract of a poster Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals (2021) Arzig M, Künecke U, Salamon M, Uhlmann N, Wellmann P Journal article New approaches and understandings in the growth of cubic silicon carbide (2021) Via FL, Zimbone M, Bongiorno C, La Magna A, Fisicaro G, Deretzis I, Scuderi V, et al. Journal article Analysis of compositional gradients in Cu(In,Ga)(S,Se)2 solar cell absorbers using energy dispersive x-ray analysis with different acceleration energies (2021) Künecke U, Schuster M, Wellmann P Journal article, Original article Special Equipment for Ammonothermal Processes (2021) Schlücker E, Hertweck B, Schimmel S, Wellmann P Book chapter / Article in edited volumes In Situ Visualization of the Ammonothermal Crystallization Process by X-ray Technology (2021) Schimmel S, Wellmann P Book chapter / Article in edited volumes