Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

SiC epitaxial structure growth: evaluation and modeling (2006) Nishizawa SI, Wellmann P, Pons M Book chapter / Article in edited volumes Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC (2006) Sakwe A, Müller R, Wellmann P Journal article, Original article Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling (2006) Pons M, Wellmann P, Nishizawa SI, Blanquet E, Dedulle J, Chaussende D Journal article, Original article Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method (2006) Contreras S, Zielinski M, Konczewicz L, Blanc C, Juillaguet S, Müller R, Künecke U, et al. Journal article, Original article Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering (2006) Müller R, Künecke U, Thuaire A, Mermoux M, Pons M, Wellmann P Journal article Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC (2006) Wellmann P, Queren D, Müller R, Sakwe A, Künecke U Journal article, Original article Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC (2006) Sakwe A, Müller R, Queren D, Künecke U, Wellmann P Journal article In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging (2006) Chaussende D, Wellmann P, Ucar M, Pons M, Madar R Journal article, Original article Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals (2006) Sakwe A, Müller R, Masri P, Wellmann P Journal article Electronic Raman Studies of Shallow Donors in Silicon Carbide (2006) Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann P, et al. Journal article, Original article