Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Germanium Incorporation during PVT Bulk Growth of Silicon Carbide (2009) Hens P, Künecke U, Konias K, Hock R, Wellmann P Journal article, Original article P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates (2009) Hens P, Syvaejaervi M, Oehlschläger F, Wellmann P, Yakimova R Journal article, Original article Thermal Expansion Coefficients of 6H Silicon Carbide (2009) Stockmeier M, Sakwe A, Hens P, Wellmann P, Hock R, Magerl A Journal article, Original article Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum (2009) Hens P, Künecke U, Wellmann P Journal article, Original article Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films (2008) Welte A, Waldauf C, Brabec CJ, Wellmann P Journal article Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution (2008) Sakwe A, Stockmeier M, Hens P, Müller R, Queren D, Künecke U, Konias K, et al. Journal article Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC (2008) Steeds JW, Sullivan W, Furkert SA, Evans GA, Wellmann P Journal article Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching (2008) Wellmann P, Sakwe A, Oehlschläger F, Hoffmann V, Zeimer U, Knauer A Journal article Conductance Enhancement of Nano-Particulate Indium Tin Oxide Layers Fabricated by Printing Technique (2008) Groß M, Maksimenko I, Faber H, Linse N, Wellmann P Conference contribution Bulk growth of SiC (2008) Wellmann P, Müller R, Sakwe A, Künecke U, Hens P, Stockmeier M, Konias K, et al. Journal article, Original article