Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices (2009) Groß M, Linse N, Maksimenko I, Wellmann P Journal article Sulfo-selenization of metallic thin films of Cu, In and Cu-In (2009) Hölzing A, Schurr R, Schäfer H, Jaeger A, Jost S, Palm J, Deseler K, et al. Journal article On the lattice parameters of silicon carbide (2009) Stockmeier M, Müller R, Sakwe A, Wellmann P, Magerl A Journal article Advanced Electronics – Materials, Devices and System Applications (with Special Topic on Disperse Systems for Printable Electronics), Proceedings of the 3rd Chinese-German Summer School in Erlangen (2009) Wellmann P, Feng Z, Shi G Edited Volume Silicon carbide growth: C/Si ratio evaluation and modeling (2009) Pons M, Nishizawa SI, Wellmann P, Blanquet E, Chaussende D, Dedulle J, Madar R Journal article, Original article Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity (2009) Oehlschläger F, Juillaguet S, Peyre H, Calmassel J, Wellmann P Journal article, Original article In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction (2009) Wellmann P, Konias K, Hens P, Hock R, Magerl A Journal article, Original article Germanium Incorporation during PVT Bulk Growth of Silicon Carbide (2009) Hens P, Künecke U, Konias K, Hock R, Wellmann P Journal article, Original article P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates (2009) Hens P, Syvaejaervi M, Oehlschläger F, Wellmann P, Yakimova R Journal article, Original article Thermal Expansion Coefficients of 6H Silicon Carbide (2009) Stockmeier M, Sakwe A, Hens P, Wellmann P, Hock R, Magerl A Journal article, Original article