Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content (2010) Hölzing A, Schurr R, Jost S, Palm J, Deseler K, Hock R, Wellmann P Journal article, Original article Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100) (2010) Hens P, Wagner G, Hölzing A, Hock R, Wellmann P Journal article, Original article Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction (2010) Hock R, Konias K, Perdicaro LMS, Magerl A, Hens P, Wellmann P Journal article, Original article Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices (2009) Groß M, Linse N, Maksimenko I, Wellmann P Journal article Sulfo-selenization of metallic thin films of Cu, In and Cu-In (2009) Hölzing A, Schurr R, Schäfer H, Jaeger A, Jost S, Palm J, Deseler K, et al. Journal article On the lattice parameters of silicon carbide (2009) Stockmeier M, Müller R, Sakwe A, Wellmann P, Magerl A Journal article Advanced Electronics – Materials, Devices and System Applications (with Special Topic on Disperse Systems for Printable Electronics), Proceedings of the 3rd Chinese-German Summer School in Erlangen (2009) Wellmann P, Feng Z, Shi G Edited Volume Silicon carbide growth: C/Si ratio evaluation and modeling (2009) Pons M, Nishizawa SI, Wellmann P, Blanquet E, Chaussende D, Dedulle J, Madar R Journal article, Original article Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity (2009) Oehlschläger F, Juillaguet S, Peyre H, Calmassel J, Wellmann P Journal article, Original article In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction (2009) Wellmann P, Konias K, Hens P, Hock R, Magerl A Journal article, Original article