Wide-Bandgap Devices

Analytische Modellierung und Weiterentwicklung von monolithisch integrierten 900 V Silizium RC-Snubbern July 1, 2023 - July 1, 2026 Optimierung der elektrischen Eigenschaften von 4H-SiC-Leistungshalbleitern mittels „Trench“-Struktur Sept. 1, 2021 - Sept. 1, 2024 Towards reliable high-temperature stable SiC CMOS technology - concepts, challenges and solutions (HT CMOS) Sept. 1, 2021 - Sept. 1, 2024 Modeling and Verification of 4H-SiC TrenchMOS integration using Trench-First-Technology Sept. 1, 2021 - Sept. 1, 2024 Novel Approach to SiC Power Device Fabrication: High-Purity Semi-insulating Substrates Doped by Energy-Filtered Ion Implantation Sept. 1, 2021 - Sept. 1, 2024 An Approach for the Characterization of the Adhesion Strength Degradation of Semiconductor's Thin Film Metallizations Sept. 1, 2021 - Sept. 30, 2023 Process optimization to increase yield of unipolar 4H-SiC Power Devices Jan. 1, 2020 - Jan. 1, 2023 Monolithisch integrierter Überstromschutzschalter basierend auf 4H-SiC JFET Technologie (SiC-DCBreaker) Aug. 1, 2019 - Aug. 1, 2022 Empirical modell of low ohmic Ni contact formation on n-type 4H-SiC by laser annealing March 1, 2017 - March 1, 2020