Silicon Carbide and Epitaxial Graphene: Light/Matter Interfaces

Color center Farbzentrum in der Einheitszelle von 4H-SiC Stark Effekt an der Silizium-Fehlstelle in SiC Untersuchungen von Farbzentren im elektrischen Feld
close-button

Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

From
To

Abstract

Journal

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers (2023) Hochreiter A, Möller MN, Groß F, Krieger M, Weber HB Journal article, Letter Light-field–driven electronics in the mid-infrared regime: Schottky rectification (2022) Schlecht MT, Knorr M, Schmid C, Malzer S, Huber R, Weber HB Journal article, Letter Light-field control of real and virtual charge carriers (2022) Boolakee T, Heide C, Garzón-Ramírez A, Weber HB, Franco I, Hommelhoff P Journal article Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain (2021) Rühl M, Lehmeyer J, Nagy R, Weißer M, Bockstedte M, Krieger M, Weber HB Journal article, Letter Attosecond-fast internal photoemission (2020) Heide C, Hauck M, Higuchi T, Ristein J, Ley L, Weber HB, Hommelhoff P Journal article, Letter Stark Tuning of the Silicon Vacancy in Silicon Carbide (2020) Rühl M, Bergmann L, Krieger M, Weber HB Journal article, Letter An efficient Terahertz rectifier on the graphene/SiC materials platform (2019) Schlecht MT, Malzer S, Preu S, Weber HB Journal article, Original article Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing (2018) Rühl M, Ott C, Götzinger S, Krieger M, Weber HB Journal article, Letter Light-field-driven currents in graphene (2017) Higuchi T, Heide C, Ullmann K, Weber HB, Hommelhoff P Journal article, Letter