Silicon carbide and Epitaxial Graphene: Electronic Properties

Wellenfunktion in der Graphen-Doppellage 2MV-Beschleuniger zur Implantation von Punktdefekten Einheitszelle von 4H-Siliziumkarbid Monolithischer Graphen-Transistor
close-button

Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

From
To

Abstract

Journal

Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques (2023) Lehmeyer J, Citak T, Weber HB, Krieger M Journal article Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices (2022) Kodolitsch E, Sodan V, Krieger M, Weber HB, Tsavdaris N Journal article, Letter Epitaxial Graphene on silicon carbide as a tailorable metal-semiconductor interface (2021) Krieger M, Weber HB Book chapter / Article in edited volumes An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors (2019) Hauck M, Lehmeyer J, Pobegen G, Weber HB, Krieger M Journal article, Original article Anomalous Dirac point transport due to extended defects in bilayer graphene (2017) Shallcross S, Sharma S, Weber HB Journal article, Letter Linear magnetoresistance in mosaic-like bilayer graphene (2015) Kißlinger F, Ott C, Heide C, Kampert E, Butz B, Spiecker E, Shallcross S, Weber HB Journal article, Letter Dislocations in bilayer graphene (2014) Butz B, Dolle C, Niekiel F, Weber K, Waldmann D, Weber HB, Meyer B, et al. Journal article Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics (2012) Hertel S, Waldmann D, Jobst J, Albert A, Albrecht M, Krieger M, Reshanov S, et al. Journal article, Letter