High-Temperature H2- and N2- Containing Surface Conditioning for SiO2/4H-SiC Interface Optimization
Ziegler J, Scholten D, Bartolf H, Schulze J (2026)
Publication Type: Book chapter / Article in edited volumes
Publication year: 2026
Journal
Publisher: Trans Tech Publications Ltd
Series: Materials Science Forum
Book Volume: 1192
Pages Range: 67-74
DOI: 10.4028/p-1Pi4j8
Abstract
In this paper, we study high-temperature H2, N2, and H2/N2 surface conditioning processes prior to the SiO2 deposition as a promising approach for SiO2/4H-SiC interface preparation in metal-oxide-semiconductor field-effect transistors (MOSFET). A thorough electrical analysis is presented, consisting of temperature-dependent transfer characteristics as well as reliability studies regarding bias temperature instabilities (BTI) and dielectric breakdown behavior. Especially N2-containing surface pretreatments were found to greatly suppress electron traps, whereas hole trapping is enhanced. Finally, X-ray photoelectron spectroscopy (XPS) was utilized to elucidate the elemental surface composition after the different annealing procedures. The obtained results are in good agreement with the electrical characterization and complement already published results regarding the formation of surface reconstructions on 4H-SiC through H2 and H2/N2 annealings.
Involved external institutions
Robert Bosch GmbH
Germany (DE)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
Germany (DE)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
How to cite
APA:
Ziegler, J., Scholten, D., Bartolf, H., & Schulze, J. (2026). High-Temperature H2- and N2- Containing Surface Conditioning for SiO2/4H-SiC Interface Optimization. In (pp. 67-74). Trans Tech Publications Ltd.
MLA:
Ziegler, Johannes, et al. "High-Temperature H2- and N2- Containing Surface Conditioning for SiO2/4H-SiC Interface Optimization." Trans Tech Publications Ltd, 2026. 67-74.
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