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Influence of Different Contact Lengths on the Correct Extraction of the Resistance Parameters of TLM Test Structures on 4H-SiC

Ley M, Kauth J, Rommel M, Fischer B, May A, Schulze J (2026)

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Publication Type: Book chapter / Article in edited volumes

Publication year: 2026

Journal

Publisher: Trans Tech Publications Ltd

Series: Materials Science Forum

Book Volume: 1192

Pages Range: 89-96

DOI: 10.4028/p-U2bkIl

Abstract

Accurate characterization of low-resistance ohmic contacts on 4H-SiC is crucial for device development, but is complicated by the limitations of the standard Transfer Length Method (TLM). TLM test structures are widely used for extracting the specific contact resistivity (ΡC ) between metal and semiconductor layers, as well as the sheet resistance of doped layers. The contact formation process itself, particularly the annealing step, modifies the SiC layer under the contact. This results in a sheet resistance below the contact (RSK ) that deviates from the sheet resistance of interest between the contacts (RSH ), which invalidates a key assumption of the standard TLM evaluation of a constant RSH throughout the whole TLM test structure. This study uses 2D TCAD simulation of TLM test structures to investigate the influence of the contact length L, while using an advanced evaluation method for extracting ΡC with the help of a third contact. Consequently, it is necessary to measure the contact end resistance RCE, which is derived from the potential at the end of the TLM contact. The findings provide a deeper understanding of the TLM technique’s robustness and offer valuable guidelines for optimizing TLM test structures to ensure accurate characterization of ohmic contacts on 4H-SiC.

Involved external institutions

How to cite

APA:

Ley, M., Kauth, J., Rommel, M., Fischer, B., May, A., & Schulze, J. (2026). Influence of Different Contact Lengths on the Correct Extraction of the Resistance Parameters of TLM Test Structures on 4H-SiC. In (pp. 89-96). Trans Tech Publications Ltd.

MLA:

Ley, Maximilian, et al. "Influence of Different Contact Lengths on the Correct Extraction of the Resistance Parameters of TLM Test Structures on 4H-SiC." Trans Tech Publications Ltd, 2026. 89-96.

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