Menke H, Enderlein N, Gillen R, Tseng YT, Bockstedte M, Maultzsch J, Sangiovanni G, Hansmann P (2026)
Publication Type: Journal article
Publication year: 2026
Book Volume: 136
Article Number: 246503
DOI: 10.1103/yh3v-pwz9
We propose three transition-metal adatom systems on SiC surfaces as a versatile platform to realize massless Dirac fermions and flat bands with strong electronic correlations. Using density functional theory combined with the constrained random phase approximation and dynamical mean-field theory, we investigate the electronic properties of Ti, V, and Cr adatoms. The triangular surface lattices exhibit narrow bandwidths and effective two-band Hubbard models near the Fermi level, originating from partially filled adatom 𝑑
orbitals. For the undoped systems our calculations reveal two distinct Mott insulating ground states. While the V lattice is a paramagnetic textbook case with large local moments, the Cr lattice, in contrast, is on the edge of a phase transition toward a flat-band Fermi liquid. The Ti lattice realizes a heavy Dirac semimetal at zero doping.
APA:
Menke, H., Enderlein, N., Gillen, R., Tseng, Y.-T., Bockstedte, M., Maultzsch, J.,... Hansmann, P. (2026). Engineering Correlated Dirac Fermions and Flat Bands on SiC with Transition-Metal Adatom Lattices. Physical Review Letters, 136. https://doi.org/10.1103/yh3v-pwz9
MLA:
Menke, Henri, et al. "Engineering Correlated Dirac Fermions and Flat Bands on SiC with Transition-Metal Adatom Lattices." Physical Review Letters 136 (2026).
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