RF Switches in CMOS FDSOI Process—from Circuit Concepts to Implementation
Özdamar O, Solomko V, Syroiezhin S, Weigel R (2025)
Publication Type: Authored book
Publication year: 2025
Publisher: Springer Science+Business Media
ISBN: 9783031851148
DOI: 10.1007/978-3-031-85114-8_9
Abstract
This chapter describes the key characteristics of RF switch MOSFETs in dedicated FD-SOI CMOS technologies, demonstrates circuit design techniques for stacked RF switches, including biasing topologies, switching time aspects, and modeling of the substrate capacitance based on microstrip line model for the flip-chip and wire-bonded IC configurations, and touches the back-gate biasing aspects of switch design. A case study with a high-voltage RF switch fabricated in a dedicated 65 nm FD-SOI CMOS process, comprising four switch throws, where an acceleration circuit is incorporated into one switch and the remaining switches are designed conventionally is provided. The switch with acceleration circuit enhances the switching speed by a factor of 12 transitioning from off-to-on state, while in on-to-off direction, the switching time is three times faster compared to the conventional design with no penalty in large- and small-signal performance of the device.
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Germany (DE)How to cite
APA:
Özdamar, O., Solomko, V., Syroiezhin, S., & Weigel, R. (2025). RF Switches in CMOS FDSOI Process—from Circuit Concepts to Implementation. Springer Science+Business Media.
MLA:
Özdamar, Oğuzhan, et al. RF Switches in CMOS FDSOI Process—from Circuit Concepts to Implementation. Springer Science+Business Media, 2025.
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