High-Resolution Nanoscale AC Quantum Sensing in CMOS Compatible SiC

Fisher P, Zappacosta A, Fuhrmann J, Haylock B, Gao W, Nagy R, Jelezko F, Cernansky R (2025)

Publication Type: Journal article

Publication year: 2025

Journal

Nano Letters American Chemical Society

Book Volume: 25

Pages Range: 11626-11631

Issue: 30

DOI: 10.1021/acs.nanolett.5c02515

Abstract

High-resolution nanoscale nuclear magnetic resonance (NMR) allows measurement of chemical structure at the single-molecule level for determining molecular dynamics. Until now, nitrogen vacancy centers in diamond have been the only platform to demonstrate single-defect NMR sensing at sub-Hz spectral resolution. Using a single silicon vacancy defect prepared under CMOS-compatible conditions in commercial 4H-silicon carbide at room temperature, we use the Synchronized Readout technique to measure a test signal. We achieve a spectral resolution of 0.33 Hz, necessary for understanding molecular structure, and estimate a magnetic sensitivity of 358 μT/

Hz⎯⎯⎯⎯⎯√

 for our system. We also explore the necessary improvements for achieving single-proton spin sensitivity. Combining these results with future integrated photonics shows a promising path toward scalable nanoscale sensing for low-cost NMR spectrometers based on an industry-mature silicon carbide material.

Authors with CRIS profile

Roland Nagy Lehrstuhl für Angewandte Quantentechnologien

Involved external institutions

Universität Ulm DE Germany (DE) Nanyang Technological University (NTU) SG Singapore (SG)

How to cite

APA:

Fisher, P., Zappacosta, A., Fuhrmann, J., Haylock, B., Gao, W., Nagy, R.,... Cernansky, R. (2025). High-Resolution Nanoscale AC Quantum Sensing in CMOS Compatible SiC. Nano Letters, 25, 11626-11631. https://doi.org/10.1021/acs.nanolett.5c02515

MLA:

Fisher, Paul, et al. "High-Resolution Nanoscale AC Quantum Sensing in CMOS Compatible SiC." Nano Letters 25 (2025): 11626-11631.

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