Wang X, Zhou H, Wilks RG, Hsieh TE, Yang W, Zhang Y, Zhan H, Bai L, Zheng JC, Bär M, Kang J, Wang HQ (2025)
Publication Type: Journal article
Publication year: 2025
Nitrogen doping is a commonly employed and effective strategy to achieve p-type ZnO films. A detailed understanding of the ZnO film growth behavior resulting in epitaxy is essential for elucidating the doping mechanism. In this study, ZnO films are grown on nonpolar (101̅0) ZnO substrates using plasma-assisted molecular-beam epitaxy (PA-MBE). Introducing nitrogen during PA-MBE growth is expected to lead to the incorporation of N, thus affecting the film properties. Growth kinetics, surface morphology, and chemical structure of the films are thus investigated through in situ reflection high-energy electron diffraction, in-system scanning tunneling microscopy, and ex situ synchrotron-based X-ray absorption spectroscopy. Well-ordered “stripe-like” structures are observed on the surface of the N-free ZnO films that evolve into “corn-like” nanostructures upon nitrogen addition and further transform into a “particle-like” morphology as the N
APA:
Wang, X., Zhou, H., Wilks, R.G., Hsieh, T.E., Yang, W., Zhang, Y.,... Wang, H.Q. (2025). Effect of Nitrogen Introduction during (101̅0) ZnO Plasma-Assisted Molecular Beam Epitaxy on the Film Properties. ACS Omega. https://doi.org/10.1021/acsomega.5c02932
MLA:
Wang, Xiaodan, et al. "Effect of Nitrogen Introduction during (101̅0) ZnO Plasma-Assisted Molecular Beam Epitaxy on the Film Properties." ACS Omega (2025).
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