IGBT Comparison for Optimized Switching Behavior in the SiC/Si-Hybrid Switch

Amler A, Heckel T, Ruppert D, Retter C, März M (2025)

Publication Type: Conference contribution

Publication year: 2025

Publisher: IEEE

City/Town: New York City

Pages Range: 1759-1766

Conference Proceedings Title: 2025 IEEE Applied Power Electronics Conference and Exposition (APEC)

Event location: Atlanta US

DOI: 10.1109/APEC48143.2025.10977454

Abstract

The parallel connection of Si-IGBTs and SiC-MOSFETs in a so-called hybrid switch offers new degrees of freedom to optimize the efficiency of bridge-type inverters and converters. By separately controlling the parallel devices with a gate delay, the switching performance can be improved to resemble that of the superior MOSFET. It is known that the optimal switching strategy depends on the operating point (temperature, current) and the hybrid switch design (chip area ratio, gate resistance). Additionally, the switching and conduction behavior changes drastically when using different IGBT technologies and devices. The comprehensive experimental study performed for this paper demonstrates that the IGBT technology used has a strong influence on the system efficiency as a result of its forward characteristics and its turn-OFF performance and gives an overview of the relevant dependencies. Different established and state-of-the-art IGBTs are tested in a double pulse setup and compared regarding their switching performance in the hybrid switch. It is shown that the hybrid switch variants can achieve from up to 54 % to 71 % system loss reduction compared to a standalone IGBT system depending on the device selection. It thus performs on-par with SiC MOSFETs under comparable operating conditions.

Authors with CRIS profile

Adrian Amler Lehrstuhl für Leistungselektronik (LEE) Martin März Lehrstuhl für Leistungselektronik (LEE)

Involved external institutions

Volkswagen AG DE Germany (DE) Audi AG DE Germany (DE) Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Amler, A., Heckel, T., Ruppert, D., Retter, C., & März, M. (2025). IGBT Comparison for Optimized Switching Behavior in the SiC/Si-Hybrid Switch. In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp. 1759-1766). Atlanta, US: New York City: IEEE.

MLA:

Amler, Adrian, et al. "IGBT Comparison for Optimized Switching Behavior in the SiC/Si-Hybrid Switch." Proceedings of the 2025 IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta New York City: IEEE, 2025. 1759-1766.

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