Controlled Domain in 3C-SiC Epitaxial Growth on Off-oriented 4H-SiC Substrates for Improvement of Photocathode Performance
Rho K, Fujita J, Kato M (2024)
Publication Type: Journal article
Publication year: 2024
Journal
Book Volume: 13
Article Number: 125002
Journal Issue: 12
Abstract
Cubic SiC (3C-SiC) is a promising semiconductor photocathode material for photoelectrochemical (PEC) water splitting. However, defect control in 3C-SiC is critical for achieving high efficiency. In this study, we fabricated single-domain 3C-SiC on off-orientation 4H-SiC substrates by controlling the domain structure of 3C-SiC epilayers. The morphology of the controlled domains was examined using white-light confocal microscopy. Electron backscatter diffraction confirmed the formation of a single-domain 3C-SiC on the off-orientation substrate (off-HPSI). To investigate the effect of the single domain on the PEC properties, we employed microwave photo-conductivity decay (μ-PCD). It was revealed that the excess carrier decay curves in the off-HPSI had an average lifetime of 1/e, approximately 134 ns, which was longer than that of the on-HPSI. The PEC properties of 3C-SiC grown on an off-orientation substrate were investigated using a three-electrode system. Single-domain 3C-SiC on an off-orientation substrate exhibited higher performance than 3C-SiC on an on-orientation substrate. The photon-to-current conversion efficiency was calculated based on the size of the photocurrent and applied bias, and 3C-SiC with controlled domains demonstrated improved photocathode performance. Considering the influence of a single domain on the PEC properties, single-domain 3C-SiC has emerged as a promising semiconductor photocathode for PEC water splitting.
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Japan (JP)How to cite
APA:
Rho, K., Fujita, J., & Kato, M. (2024). Controlled Domain in 3C-SiC Epitaxial Growth on Off-oriented 4H-SiC Substrates for Improvement of Photocathode Performance. ECS Journal of Solid State Science and Technology, 13(12). https://doi.org/10.1149/2162-8777/ad9e7a
MLA:
Rho, Kongshik, Jun Fujita, and Masashi Kato. "Controlled Domain in 3C-SiC Epitaxial Growth on Off-oriented 4H-SiC Substrates for Improvement of Photocathode Performance." ECS Journal of Solid State Science and Technology 13.12 (2024).
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