Controlled Domain in 3C-SiC Epitaxial Growth on Off-oriented 4H-SiC Substrates for Improvement of Photocathode Performance

Rho K, Fujita J, Kato M (2024)


Publication Type: Journal article

Publication year: 2024

Journal

Book Volume: 13

Article Number: 125002

Journal Issue: 12

DOI: 10.1149/2162-8777/ad9e7a

Abstract

Cubic SiC (3C-SiC) is a promising semiconductor photocathode material for photoelectrochemical (PEC) water splitting. However, defect control in 3C-SiC is critical for achieving high efficiency. In this study, we fabricated single-domain 3C-SiC on off-orientation 4H-SiC substrates by controlling the domain structure of 3C-SiC epilayers. The morphology of the controlled domains was examined using white-light confocal microscopy. Electron backscatter diffraction confirmed the formation of a single-domain 3C-SiC on the off-orientation substrate (off-HPSI). To investigate the effect of the single domain on the PEC properties, we employed microwave photo-conductivity decay (μ-PCD). It was revealed that the excess carrier decay curves in the off-HPSI had an average lifetime of 1/e, approximately 134 ns, which was longer than that of the on-HPSI. The PEC properties of 3C-SiC grown on an off-orientation substrate were investigated using a three-electrode system. Single-domain 3C-SiC on an off-orientation substrate exhibited higher performance than 3C-SiC on an on-orientation substrate. The photon-to-current conversion efficiency was calculated based on the size of the photocurrent and applied bias, and 3C-SiC with controlled domains demonstrated improved photocathode performance. Considering the influence of a single domain on the PEC properties, single-domain 3C-SiC has emerged as a promising semiconductor photocathode for PEC water splitting.

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How to cite

APA:

Rho, K., Fujita, J., & Kato, M. (2024). Controlled Domain in 3C-SiC Epitaxial Growth on Off-oriented 4H-SiC Substrates for Improvement of Photocathode Performance. ECS Journal of Solid State Science and Technology, 13(12). https://doi.org/10.1149/2162-8777/ad9e7a

MLA:

Rho, Kongshik, Jun Fujita, and Masashi Kato. "Controlled Domain in 3C-SiC Epitaxial Growth on Off-oriented 4H-SiC Substrates for Improvement of Photocathode Performance." ECS Journal of Solid State Science and Technology 13.12 (2024).

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