Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
Boettcher N, Rommel M, Erlbacher T (2024)
Publication Language: English
Publication Type: Journal article
Publication year: 2024
Journal
Book Volume: 360
Pages Range: 111-118
DOI: 10.4028/p-EkvC4B
Abstract
In this work, an analytical model describing the quasi-static operation of a monolithically integrated SiC solid-state circuit breaker (SSCB) device is rederived and refined. This SSCB is based on a 4H-SiC JFET technology offering a self-sensed blocking mechanism. The proposed model is solely based on physical parameters including the SSCB design parameters. With respect to the refinement, the proposed model is not limited to one-sided pn-junctions, considers incomplete ionization of dopants, and is able to represent breakdown characteristics. In this regard, the JFET gate breakdown characteristics are derived taking thermionic emission, space-charge-limited current and impact ionization into account. To calculate the SSCB output characteristics, a bisection-based optimization algorithm is applied carefully considering individual JFET operating states.
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Germany (DE)How to cite
APA:
Boettcher, N., Rommel, M., & Erlbacher, T. (2024). Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device. Solid State Phenomena, 360, 111-118. https://doi.org/10.4028/p-EkvC4B
MLA:
Boettcher, Norman, Mathias Rommel, and Tobias Erlbacher. "Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device." Solid State Phenomena 360 (2024): 111-118.
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