Seidel L, Liu T, Concepción O, Marzban B, Kiyek V, Spirito D, Schwarz D, Benkhelifa A, Schulze J, Ikonic Z, Hartmann JM, Chelnokov A, Witzens J, Capellini G, Oehme M, Grützmacher D, Buca D (2024)
Publication Type: Journal article
Publication year: 2024
Book Volume: 15
Article Number: 10502
Journal Issue: 1
DOI: 10.1038/s41467-024-54873-z
Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.
APA:
Seidel, L., Liu, T., Concepción, O., Marzban, B., Kiyek, V., Spirito, D.,... Buca, D. (2024). Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors. Nature Communications, 15(1). https://doi.org/10.1038/s41467-024-54873-z
MLA:
Seidel, Lukas, et al. "Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors." Nature Communications 15.1 (2024).
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