Status of 3C-SiC Growth and Device Technology

Wellmann P, Schöler M, Schuh P, Jennings M, Li F, Nipoti R, Severino A, Anzalone R, Roccaforte F, Zimbone M, Via FL (2021)

Publication Type: Authored book

Publication year: 2021

Publisher: wiley

ISBN: 9783527824724

DOI: 10.1002/9783527824724.ch5

Abstract

Since the early days of research in the field of the wide band gap semiconductor silicon carbide (SiC), the cubic polytype has been favorable because it exhibits the highest electron mobility. The electronic band gap and electric breakdown are slightly smaller than the hexagonal 4H-SiC. Therefore, the ideal operation range of power electronic devices based on 3C-SiC lies in the mid-voltage range of 400-600 V as it is used in the large application field of electric automotive applications. The current review presents a state-of-the-art overview over the complete processing change from materials growth to device processing.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Michael Schöler Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Philipp Schuh Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)

Involved external institutions

Consiglio Nazionale delle Ricerche (CNR) / National Research Council of Italy

Italy (IT) STMicroelectronics N.V.

Switzerland (CH) CNR Institute for Microelectronics and Microsystems (CNR-IMM)

Italy (IT) Swansea University

United Kingdom (GB)

How to cite

APA:

Wellmann, P., Schöler, M., Schuh, P., Jennings, M., Li, F., Nipoti, R.,... Via, F.L. (2021). Status of 3C-SiC Growth and Device Technology. wiley.

MLA:

Wellmann, Peter, et al. Status of 3C-SiC Growth and Device Technology. wiley, 2021.

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