Imaging effects of particles on the surface of EUV mask and wafer

Semaan R, Bottiglieri G, Erdmann A, Rispens G, de Winter L, Beekmans S (2024)


Publication Type: Conference contribution

Publication year: 2024

Publisher: SPIE

Book Volume: 13273

Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering

Event location: Grenoble FR

ISBN: 9781510682887

DOI: 10.1117/12.3027067

Abstract

The high spatial resolution of EUV lithography makes it highly sensitive to defects caused by particle contamination on the surface of the mask and the wafer. These particles can degrade imaging quality, cause defects, and ultimately lead to yield loss. This paper investigates the effect of common particle types (BN, SiO2, and C) on the printed image under different conditions. It focuses on determining the range of particle sizes relevant for pattern defectivity for a set of typical use cases (dense line/spaces and dense hexagonal contact holes) in 0.33 NA and 0.55 NA (high-NA) EUV lithography scanners. The ultimate objective is to provide guidelines to prevent unnecessary mask cleaning and facilitate wafer and mask inspection. The study is conducted by modeling the EUV scanners and conducting rigorous electromagnetic field (EMF) simulations using the lithography simulator HyperLith™ by Panoramic Technology.

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How to cite

APA:

Semaan, R., Bottiglieri, G., Erdmann, A., Rispens, G., de Winter, L., & Beekmans, S. (2024). Imaging effects of particles on the surface of EUV mask and wafer. In Uwe F. Behringer, Jo Finders (Eds.), Proceedings of SPIE - The International Society for Optical Engineering. Grenoble, FR: SPIE.

MLA:

Semaan, Rawan, et al. "Imaging effects of particles on the surface of EUV mask and wafer." Proceedings of the 39th European Mask and Lithography Conference, EMLC 2024, Grenoble Ed. Uwe F. Behringer, Jo Finders, SPIE, 2024.

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