Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization
Becker T, Hellinger C, Fuchs A, Körfer J, Rusch O (2024)
Publication Language: English
Publication Type: Journal article
Publication year: 2024
Journal
Original Authors: Tom Becker, Carsten Hellinger, Alesa Fuchs, Julien Koerfer, Oleg Rusch
Book Volume: 359
Pages Range: 79-84
DOI: 10.4028/p-t2sWXi
Abstract
To achieve low on-resistance in any vertical 4H-SiC semiconductor power device, it is
essential to create a suitable ohmic contact on the corresponding n-doped SiC substrate. In particular
after wafer thinning, a common technology to reduce substrate resistivity, laser annealing for ohmic
contact formation on the wafer backside is the only option due to temperature sensitive materials
(such as Titanium or Aluminum) on the partially or fully processed wafer frontside. In this work, to
solve adhesion issues of the backside metallization, plasma treatments, as easy to integrate process
steps, were examined. By stripping obstructive carbon layers, formed after ohmic contact laser
annealing, and without damaging the wafer frontside, an enhanced adhesion of following
metallization layers was achieved. Both O2- and H2-plasma processes were investigated and
demonstrated significant improvements to the adhesion of metallization stacks on the wafer backside
compared to untreated surfaces and without drawbacks in the ohmic contact quality.
Authors with CRIS profile
Involved external institutions
Germany (DE)How to cite
APA:
Becker, T., Hellinger, C., Fuchs, A., Körfer, J., & Rusch, O. (2024). Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization. Solid State Phenomena, 359, 79-84. https://doi.org/10.4028/p-t2sWXi
MLA:
Becker, Tom, et al. "Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization." Solid State Phenomena 359 (2024): 79-84.
BibTeX: Download