Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements

Cornigli D, Schlichting H, Becker T, Larcher L, Erlbacher T, Pešić M (2024)

Publication Language: English

Publication Type: Journal article

Publication year: 2024

Journal

Solid State Phenomena Trans Tech Publications

Book Volume: 361

Pages Range: 93-98

DOI: 10.4028/p-jbV5Vq

Abstract

In this study we analyzed the physical mechanisms governing time-dependent dielectric
breakdown (TDDB) and we used TDDB physical model of dielectric breakdown, implemented in the
defect-centric Ginestra® modeling platform, to deconvolute the intrinsic material properties effects
and geometry feature impact on the gate oxide (GOx) and SiC-device breakdown.

Authors with CRIS profile

Holger Schlichting
Tom Becker
Tobias Erlbacher Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Applied Materials, Inc. (Italy) IT Italy (IT) Applied Materials, Inc. US United States (USA) (US)

How to cite

APA:

Cornigli, D., Schlichting, H., Becker, T., Larcher, L., Erlbacher, T., & Pešić, M. (2024). Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements. Solid State Phenomena, 361, 93-98. https://doi.org/10.4028/p-jbV5Vq

MLA:

Cornigli, Davide, et al. "Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements." Solid State Phenomena 361 (2024): 93-98.

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