A Broadband 22 nm FDSOI D-Band Power Amplifier with Dynamic Back Gate Bias Gain-Linearization Achieving 9.6% PAE at 8.7 dBm OPldB and 3.7% at 6 dB Back-off

Engelmann A, Scheller K, Probst F, Koch M, Weigel R, Fischer G (2024)

Publication Type: Conference contribution, Conference Contribution

Publication year: 2024

Publisher: IEEE

Event location: Washington, DC US

ISBN: 979-8-350

URI: https://ieeexplore.ieee.org/document/10600283

DOI: 10.1109/IMS40175.2024.10600283

Abstract

This work presents a high-efficiency four-stage D-band power amplifier (PA) in a 22 nm FDSOI technology. The PA incorporates a dynamic biasing scheme that utilizes the SOI transistor's back-gate terminal to optimize the DC power consumption of each stage based on the corresponding input envelope power level. This dynamic bias control significantly improves the linearity and efficiency in the linear and power compression range. The work describes the associated power detectors and the design of a stacked FET output stage used for output power enhancement. Low-k stacked transformers are employed as interstage matching elements to broaden the bandwidth. The PA achieves 24.5 dB gain, covering a 3-dB bandwidth of 36 GHz centered at 138 GHz. Saturated output power and OPldB of 10.8 dBm and 8.6 dBm at nominal supply voltage of 1.6/0.8V is reached while only occupying a core area of 0.045 mm 2 • Achieving 9.6% PAE at OPldB and 3.7% at 6-dB power back-off, the PA demonstrates significant improvement compared to reported D-band PAs in CMOS technology.

Authors with CRIS profile

Andre Engelmann Lehrstuhl für Technische Elektronik Kai Scheller Lehrstuhl für Technische Elektronik Florian Probst Lehrstuhl für Technische Elektronik Manuel Koch Lehrstuhl für Technische Elektronik Robert Weigel Technische Fakultät Georg Fischer Professur für Technische Elektronik

Related research project(s)

Radarsysteme bei 140 GHz in 22 nm FDSOI CMOS für genaue Gestenerkennung mit kompakten Abmessungen, hoher Energieeffizienz und digitaler Signalgenerierung (ForMikro-REGGAE) Oct. 1, 2019 - June 30, 2024

How to cite

APA:

Engelmann, A., Scheller, K., Probst, F., Koch, M., Weigel, R., & Fischer, G. (2024). A Broadband 22 nm FDSOI D-Band Power Amplifier with Dynamic Back Gate Bias Gain-Linearization Achieving 9.6% PAE at 8.7 dBm OPldB and 3.7% at 6 dB Back-off. In Proceedings of the IEEE/MTT-S International Microwave Symposium - IMS 2024. Washington, DC, US: IEEE.

MLA:

Engelmann, Andre, et al. "A Broadband 22 nm FDSOI D-Band Power Amplifier with Dynamic Back Gate Bias Gain-Linearization Achieving 9.6% PAE at 8.7 dBm OPldB and 3.7% at 6 dB Back-off." Proceedings of the IEEE/MTT-S International Microwave Symposium - IMS 2024, Washington, DC IEEE, 2024.

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