Ley M, Dick J, Schulze J (2024)
Publication Type: Conference contribution
Publication year: 2024
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 1573-1578
Conference Proceedings Title: 2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings
Event location: Opatija, HRV
ISBN: 9798350382495
DOI: 10.1109/MIPRO60963.2024.10569785
TFETs are a type of transistor that switches band-to-band tunneling currents. Such devices are promising candidates for future integrated circuits, low-power electronics, and quantum applications. Device simulations of TFETs with the non-local tunneling model require material-specific parameters to correctly describe the band-to-band tunneling process. The material-specific parameters can be determined by atomistic simulations. These ab initio calculations allow fast and efficient determination of material-specific parameters without experimental input. This process is demonstrated for 4H-SiC, which is an indirect semiconductor with a large band gap to the direct conduction band valley. In 4H-SiC, phonon-assisted tunneling is the dominant tunneling process. For the validation of the simulated parameters, TCAD simulations of transfer characteristics are compared with those of measured devices.
APA:
Ley, M., Dick, J., & Schulze, J. (2024). Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations. In Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (Eds.), 2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings (pp. 1573-1578). Opatija, HRV: Institute of Electrical and Electronics Engineers Inc..
MLA:
Ley, Maximilian, Jan Dick, and Jörg Schulze. "Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations." Proceedings of the 47th ICT and Electronics Convention, MIPRO 2024, Opatija, HRV Ed. Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak, Institute of Electrical and Electronics Engineers Inc., 2024. 1573-1578.
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