Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product

Wanitzek M, Schwarz D, Schulze J, Oehme M (2024)

Publication Type: Conference contribution

Publication year: 2024

Publisher: IEEE Computer Society

Conference Proceedings Title: IEEE International Conference on Group IV Photonics GFP

Event location: Tokyo, JPN

ISBN: 9798350394047

DOI: 10.1109/SiPhotonics60897.2024.10543351

Abstract

We report GeSn-on-Si avalanche photodiodes with a Sn concentration of 2.1 %. The devices exhibit a bandwidth enhancement at high reverse voltages achieving bandwidths up to 3.9 GHz and high gains at 1,550 nm, resulting in a 60 GHz gain-bandwidth-product.

Authors with CRIS profile

Jörg Schulze Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

FAU Profilzentrum Licht.Materie.Quantentechnologien (FAU LMQ)

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Wanitzek, M., Schwarz, D., Schulze, J., & Oehme, M. (2024). Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product. In IEEE International Conference on Group IV Photonics GFP. Tokyo, JPN: IEEE Computer Society.

MLA:

Wanitzek, M., et al. "Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product." Proceedings of the 2024 IEEE Silicon Photonics Conference, SiPhotonics 2024, Tokyo, JPN IEEE Computer Society, 2024.

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