The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability

Becker T (2023)

Publication Status: Published

Publication Type: Authored book, Volume of book series

Publication year: 2023

Publisher: Trans Tech Publications Ltd

Book Volume: 1090

Pages Range: 127-133

DOI: 10.4028/p-4i3rhf

Authors with CRIS profile

Tom Becker Lehrstuhl für Elektronische Bauelemente

How to cite

APA:

Becker, T. (2023). The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability. Trans Tech Publications Ltd.

MLA:

Becker, Tom. The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability. Trans Tech Publications Ltd, 2023.

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