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SiC engineered substrate: increasing SiC MOSFETs current density from device to module level

Becker T (2024)

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Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2024

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 210-214

ISBN: 9798350316643

DOI: 10.1109/APEC48139.2024.10509052

Authors with CRIS profile

How to cite

APA:

Becker, T. (2024). SiC engineered substrate: increasing SiC MOSFETs current density from device to module level. In Proceedings of the 39th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2024 (pp. 210-214). Institute of Electrical and Electronics Engineers Inc..

MLA:

Becker, Tom. "SiC engineered substrate: increasing SiC MOSFETs current density from device to module level." Proceedings of the 39th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2024 Institute of Electrical and Electronics Engineers Inc., 2024. 210-214.

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