Mallik N, Hajhemati J, Frégnaux M, Coutancier D, Toby A, Zhang ST, Hartmann C, Hüsam E, Saleh A, Vincent T, Fournier O, Wilks RG, Aureau D, Félix R, Schneider N, Bär M, Schulz P (2024)
Publication Type: Journal article
Publication year: 2024
Book Volume: 126
Article Number: 109582
DOI: 10.1016/j.nanoen.2024.109582
With the rapidly advancing perovskite solar cell (PSC) technology, dedicated interface engineering is critical for improving device stability. Atomic layer deposition (ALD) grown metal oxide films have drawn immense attention for the fabrication of stable PSC. Despite the advantages of ALD, the deposition of metal oxides directly on bare perovskite has so far not been achieved without damaging the perovskite layer underneath. In addition, the changes to the physicochemical and electronic properties at the perovskite interface upon exposure to the ALD precursors can alter the material and hence device functionality. Herein, we report on a synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES) investigation of the interface between metal halide perovskite (MHP) absorber and ALD-SnO
APA:
Mallik, N., Hajhemati, J., Frégnaux, M., Coutancier, D., Toby, A., Zhang, S.T.,... Schulz, P. (2024). Interface defect formation for atomic layer deposition of SnO2 on metal halide perovskites. Nano Energy, 126. https://doi.org/10.1016/j.nanoen.2024.109582
MLA:
Mallik, Nitin, et al. "Interface defect formation for atomic layer deposition of SnO2 on metal halide perovskites." Nano Energy 126 (2024).
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