Zeis R, Besnard C, Siegrist T, Schlockermann C, Chi X, Kloc C (2006)
Publication Type: Journal article
Publication year: 2006
Book Volume: 18
Pages Range: 244-248
Journal Issue: 2
DOI: 10.1021/cm0502626
Rubrene single crystals have been grown by a vapor-phase process. Two additional compounds that contaminate rubrene have been identified and their structures determined. Single crystals of rubrene show excellent crystallinity and very small rocking curve width. Field effect transistors based on pure rubrene single crystals with colloidal graphite electrodes and Parylene as a dielectric demonstrate a maximal mobility of 13 cm 2/Vs with strong anisotropy. The mobility increases very slightly with cooling, but decreases significantly at low temperatures. © 2006 American Chemical Society.
APA:
Zeis, R., Besnard, C., Siegrist, T., Schlockermann, C., Chi, X., & Kloc, C. (2006). Field effect studies on rubrene and impurities of rubrene. Chemistry of Materials, 18(2), 244-248. https://doi.org/10.1021/cm0502626
MLA:
Zeis, Roswitha, et al. "Field effect studies on rubrene and impurities of rubrene." Chemistry of Materials 18.2 (2006): 244-248.
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