Single-crystal field-effect transistors based on organic selenium-containing semiconductor

Zeis R, Kloc C, Takimiya K, Kunugi Y, Konda Y, Niihara N, Otsubo T (2005)

Publication Language: English

Publication Type: Journal article

Publication year: 2005

Journal

Japanese Journal of Applied Physics Japan Society of Applied Physics

Book Volume: 44

Pages Range: 3712-3714

Journal Issue: 6A

DOI: 10.1143/JJAP.44.3712

Abstract

We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K. © 2005 The Japan Society of Applied Physics.

Authors with CRIS profile

Roswitha Zeis

Involved external institutions

Hiroshima University / 広島大学 JP Japan (JP) Lucent Technologies US United States (USA) (US)

How to cite

APA:

Zeis, R., Kloc, C., Takimiya, K., Kunugi, Y., Konda, Y., Niihara, N., & Otsubo, T. (2005). Single-crystal field-effect transistors based on organic selenium-containing semiconductor. Japanese Journal of Applied Physics, 44(6A), 3712-3714. https://doi.org/10.1143/JJAP.44.3712

MLA:

Zeis, Roswitha, et al. "Single-crystal field-effect transistors based on organic selenium-containing semiconductor." Japanese Journal of Applied Physics 44.6A (2005): 3712-3714.

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