Single-crystal field-effect transistors based on copper phthalocyanine

Zeis R, Siegrist T, Kloc C (2005)

Publication Language: English

Publication Type: Journal article

Publication year: 2005

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 86

Article Number: 022103

Journal Issue: 2

DOI: 10.1063/1.1849438

Abstract

Copper phthalocyanine (Cu-Pc) single crystals were grown by physical vapor transport and field-effect transistors (FETs) on the surface of these crystals were prepared. These FETs function as p -channel accumulation-mode devices. Charge carrier mobilities of up to 1 cm2V s combined with a low field-effect threshold were obtained. These remarkable FET characteristics, along with the highly stable chemical nature of Cu-Pc, make it an attractive candidate for device applications. © 2005 American Institute of Physics.

Authors with CRIS profile

Roswitha Zeis

Involved external institutions

Lucent Technologies US United States (USA) (US)

How to cite

APA:

Zeis, R., Siegrist, T., & Kloc, C. (2005). Single-crystal field-effect transistors based on copper phthalocyanine. Applied Physics Letters, 86(2). https://doi.org/10.1063/1.1849438

MLA:

Zeis, Roswitha, Theo Siegrist, and Christian Kloc. "Single-crystal field-effect transistors based on copper phthalocyanine." Applied Physics Letters 86.2 (2005).

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