Podzorov V, Gershenson ME, Kloc C, Zeis R, Bucher E (2004)
Publication Language: English
Publication Type: Journal article
Publication year: 2004
Book Volume: 84
Pages Range: 3301-3303
Journal Issue: 17
DOI: 10.1063/1.1723695
Field-effect transistors (FET) based on transition metal dichalcogenides (TMD) were fabricated. The fabrication of the FET with intrinsically low field-effect threshold and high charge carrier mobility was possible due to the unique structure of single crystals of these layered inorganic semiconductors. Ambipolar operation is demonstrated by the FETs. The combination of the electrical properties and mechanical flexibility make the TBD based field-effect transistors an attractive option for flexible electronics.
APA:
Podzorov, V., Gershenson, M.E., Kloc, C., Zeis, R., & Bucher, E. (2004). High-mobility field-effect transistors based on transition metal dichalcogenides. Applied Physics Letters, 84(17), 3301-3303. https://doi.org/10.1063/1.1723695
MLA:
Podzorov, V., et al. "High-mobility field-effect transistors based on transition metal dichalcogenides." Applied Physics Letters 84.17 (2004): 3301-3303.
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