Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States

Kölle S, Römer F, Cardinali G, Schulz A, Susilo N, Hauer Vidal D, Wernicke T, Kneissl M, Witzigmann B (2024)


Publication Language: English

Publication Type: Journal article, Original article

Publication year: 2024

Journal

Book Volume: 16

Pages Range: 1-5

Journal Issue: 2

DOI: 10.1109/JPHOT.2024.3379231

Abstract

Simulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge carrier density regime required for achieving gain at 275 nm for UV laser diodes. Coulomb interaction is modeled using the 2nd Born approximation. We demonstrate good agreement with experimental data obtained through optical pumping, and predict gain spectra for electrical pumping. Special consideration is given to the contribution of higher bands in wide quantum wells.

Authors with CRIS profile

Additional Organisation(s)

Involved external institutions

How to cite

APA:

Kölle, S., Römer, F., Cardinali, G., Schulz, A., Susilo, N., Hauer Vidal, D.,... Witzigmann, B. (2024). Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States. IEEE Photonics Journal, 16(2), 1-5. https://doi.org/10.1109/JPHOT.2024.3379231

MLA:

Kölle, Sebastian, et al. "Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States." IEEE Photonics Journal 16.2 (2024): 1-5.

BibTeX: Download