Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes
Okeil H, Erlbacher T, Wachutka G (2024)
Publication Type: Journal article
Publication year: 2024
Journal
Abstract
In this study ion-implanted lateral 4H-SiC pin diodes are reported, which show an unexpectedly high room temperature in-plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation-induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV-characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.
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Germany (DE)How to cite
APA:
Okeil, H., Erlbacher, T., & Wachutka, G. (2024). Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes. Advanced Electronic Materials. https://doi.org/10.1002/aelm.202300531
MLA:
Okeil, Hesham, Tobias Erlbacher, and Gerhard Wachutka. "Very High In-Plane Magnetic Field Sensitivity in Ion-Implanted 4H-SiC PIN Diodes." Advanced Electronic Materials (2024).
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