Schober M, Jungwirth N, Kobayashi T, Lehmeyer J, Krieger M, Weber HB, Bockstedte M (2023)
Publication Type: Journal article
Publication year: 2023
Book Volume: 426
Pages Range: 43-48
DOI: 10.4028/p-90qste
The TS center is a promising temperature-stable photoluminescence center in 4H SiC. Here we investigate the carbon di-vacancy-antisite complex in the framework of ab initio theory as a tentative model for the TS center. We identify optical transitions of the basal complexes with the TS lines based on excitation energies, Stark shifts, and radiative characteristics. Charge-state-control of the TS center in p- and n-type Schottky contacts is demonstrated. Our experimental findings are consistent with the positively charged carbon di-vacancy-antisite complex.
APA:
Schober, M., Jungwirth, N., Kobayashi, T., Lehmeyer, J., Krieger, M., Weber, H.B., & Bockstedte, M. (2023). The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center. Defect and Diffusion Forum, 426, 43-48. https://doi.org/10.4028/p-90qste
MLA:
Schober, M., et al. "The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center." Defect and Diffusion Forum 426 (2023): 43-48.
BibTeX: Download