Reuben JR, Fey D, Slesazeck S (2023)
Publication Type: Conference contribution
Publication year: 2023
Publisher: Institute of Electrical and Electronics Engineers Inc.
Conference Proceedings Title: 2023 12th International Conference on Modern Circuits and Systems Technologies, MOCAST 2023 - Proceedings
ISBN: 9798350321074
DOI: 10.1109/MOCAST57943.2023.10176774
Ferroelectric Tunnel Junction (FTJ) is an emerging non-volatile memory technology with increasing applications in memory and computing. Although the low currents of FTJ memories is an advantage from energy point of view, sensing of these memories is a challenge due to the pA read-out currents. In this work, we propose a Sense Amplifier (SA) specifically designed for FTJ memory technology. The proposed SA accumulates the charge at the gate of a read transistor and thus converts the pA current to hundreds of nA. A Schmitt-Trigger circuit is then used to differentiate between these two currents by using the threshold-voltage of the Schmitt-Trigger as reference. The proposed SA consumes an energy of 82 fJ/bit and also does not require an absolute voltage/current reference for sensing, thus conserving on-chip area.
APA:
Reuben, J.R., Fey, D., & Slesazeck, S. (2023). A Reference-less Sense Amplifier to Sense pA Currents in Ferroelectric Tunnel Junction Memories. In 2023 12th International Conference on Modern Circuits and Systems Technologies, MOCAST 2023 - Proceedings. Athens, GR: Institute of Electrical and Electronics Engineers Inc..
MLA:
Reuben, John Reuben, Dietmar Fey, and Stefan Slesazeck. "A Reference-less Sense Amplifier to Sense pA Currents in Ferroelectric Tunnel Junction Memories." Proceedings of the 12th International Conference on Modern Circuits and Systems Technologies, MOCAST 2023, Athens Institute of Electrical and Electronics Engineers Inc., 2023.
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