Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces

Ward JW, Smith HL, Zeidell A, Diemer PJ, Baker SR, Lee H, Payne MM, Anthony JE, Guthold M, Jurchescu OD (2017)


Publication Language: English

Publication Type: Journal article

Publication year: 2017

Journal

Book Volume: 9

Pages Range: 18120–18126

Journal Issue: 21

URI: https://pubs.acs.org/doi/10.1021/acsami.7b03232

DOI: 10.1021/acsami.7b03232

Abstract

Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic–inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor–dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.

Authors with CRIS profile

Involved external institutions

How to cite

APA:

Ward, J.W., Smith, H.L., Zeidell, A., Diemer, P.J., Baker, S.R., Lee, H.,... Jurchescu, O.D. (2017). Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces. ACS Applied Materials and Interfaces, 9(21), 18120–18126. https://dx.doi.org/10.1021/acsami.7b03232

MLA:

Ward, Jeremy W., et al. "Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces." ACS Applied Materials and Interfaces 9.21 (2017): 18120–18126.

BibTeX: Download