Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth

Steiner J, Nguyen BD, Sandfeld S, Wellmann P (2023)

Publication Type: Book chapter / Article in edited volumes

Publication year: 2023

Journal

Solid State Phenomena Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Series: Solid State Phenomena

Book Volume: 343

Pages Range: 9-14

DOI: 10.4028/p-eu98j0

Abstract

To prevent arrays of basal plane dislocations (BPD) forming during grown 4H-SiC single crystals, the growth cell in physical vapor transport (PVT) growth was modified by adapting the temperature gradients, the seed attachment method and the seeding phase. The resulting reduction in stress was modeled numerically and the crystals were investigated by X-ray topography (XRT) and molten potassium hydroxide (KOH) etching. Due to these modifications, the formation of BPD arrays was completely suppressed.

Authors with CRIS profile

Johannes Steiner Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Forschungszentrum Jülich / Research Centre Jülich (FZJ) DE Germany (DE)

How to cite

APA:

Steiner, J., Nguyen, B.D., Sandfeld, S., & Wellmann, P. (2023). Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth. In (pp. 9-14). Trans Tech Publications Ltd.

MLA:

Steiner, Johannes, et al. "Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth." Trans Tech Publications Ltd, 2023. 9-14.

BibTeX: Download